VRF150

射频功率MOSFET垂直 RF POWER VERTICAL MOSFET

The is a gold-metallized silicon n-channel RF power transistor de

signed for broadband commercial and military applications requiring high power

and gain without compromising reliability, ruggedness, or inter-modulation

distortion.

FEATURES

• Improved Ruggedness VBRDSS = 170V

• 150W with 11dB Typical Gain @ 150MHz, 50V

• 150W with 18dB Typical Gain @ 30MHz, 50V

• Excellent Stability & Low IMD

• Common Source Configuration

• Available in Matched Pairs

• 30:1 Load VSWR Capability at Specified Operating Conditions

• Nitride Passivated

• Refractory Gold Metallization

• High Voltage Replacement for MRF150

• RoHS Compliant