VRF152

MICROSEMI  VRF152  射频场效应管, 130V, M174

Need a MOSFET that will work in radio frequency environments? This RF amplifier made from is perfect for switching and amplifying electronic signals. Its maximum power dissipation is 300000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 175 MHz. This N channel RF power MOSFET operates in depletion mode.