IPW60R280P6FKSA1
INFINEON IPW60R280P6FKSA1 功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
The IPW60R280P6 is a 600V CoolMOS™ P6 N-channel Power MOSFET with reduced gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junctionSJ principle and pioneered by Technologies. The CoolMOS™ P6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
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- Extremely low losses due to very low figure of merit RDS ON x Qg and EOSS
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- Very high commutation ruggedness
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- Easy to use
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- Increased dV/dt ruggedness
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- Halogen-free
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- Qualified according to JEDEC for target applications
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- Higher Vth
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- Optimized integrated Rg
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- Improved efficiency especially in light load condition
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- Better efficiency in soft switching applications due to earlier turn-OFF
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- Suitable for hard and soft-switching topologies
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- Optimized balance of efficiency and ease of use and good controllability of switching behaviour
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- High robustness and better efficiency
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- Outstanding quality and reliability
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.