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IPW60R280C6FKSA1

INFINEON  IPW60R280C6FKSA1  功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V

CoolMOS™C6/C7 功率 MOSFET


得捷:
MOSFET N-CH 600V 13.8A TO247-3


欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPW60R280C6FKSA1, 13.8 A, Vds=650 V, 3引脚 TO-247封装


e络盟:
INFINEON  IPW60R280C6FKSA1  功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V


艾睿:
Make an effective common source amplifier using this IPW60R280C6FKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 104000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


富昌:
Single N-Channel 600 V 280 mOhm 43 nC CoolMOS™ Power Mosfet - TO-247-3


TME:
Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3


Verical:
Trans MOSFET N-CH 600V 13.8A 3-Pin3+Tab TO-247 Tube


IPW60R280C6FKSA1 PDF数据文档
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