SI2337DS-T1-E3
VISHAY SI2337DS-T1-E3 晶体管, P沟道
The is a 80VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
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- -55 to 150°C Operating temperature range
e络盟:
VISHAY SI2337DS-T1-E3 晶体管, MOSFET, P沟道, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V
艾睿:
Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
安富利:
Trans MOSFET P-CH 80V 1.2A 3-Pin TO-236 T/R
富昌:
单 P沟道 80 V 0.27 Ohms 表面贴装 功率Mosfet - TO-236
Verical:
Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
Newark:
# VISHAY SI2337DS-T1-E3 MOSFET Transistor, P Channel, -2.2 A, -80 V, 0.216 ohm, -6 V, -4 V
