SI2306BDS-T1-E3
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
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- 100% Rg tested
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- -55 to 150°C Operating temperature range
欧时:
### N 通道 MOSFET，30V 至 50V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor
艾睿:
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
安富利:
Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R
富昌:
单 N 沟道 30 V 0.047 Ohms 表面贴装 功率 Mosfet - TO-236
Verical:
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
Newark:
# VISHAY SI2306BDS-T1-E3 MOSFET Transistor, N Channel, 3.16 A, 30 V, 0.038 ohm, 10 V, 3 V
