FQB55N10TM

FAIRCHILD SEMICONDUCTOR  FQB55N10TM  晶体管, MOSFET, N沟道, 55 A, 100 V, 0.021 ohm, 10 V, 4 V

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features

• 55A, 100V, RDSon = 0.026Ω @VGS = 10 V

• Low gate charge typical 75 nC

• Low Crss typical 130 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• RoHS Compliant