BSC123N08NS3GATMA1

INFINEON  BSC123N08NS3GATMA1  晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC123N08NS3GATMA1, 55 A, Vds=80 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 80V 11A/55A TDSON

贸泽:
MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3

艾睿:
Make an effective common source amplifier using this BSC123N08NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

Chip1Stop:
Trans MOSFET N-CH 80V 11A Automotive 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 80V 11A Automotive 8-Pin TDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V

Win Source:
MOSFET N-CH 80V 55A TDSON-8