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STD110N8F6

DPAK N-CH 80V 80A

N-Channel 80V 80A Tc 167W Tc Surface Mount DPAK


立创商城:
STD110N8F6


得捷:
MOSFET N-CH 80V 80A DPAK


贸泽:
MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package


艾睿:
This STD110N8F6 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 167000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet f6 technology.


安富利:
Trans MOSFET N-CH 80V 80A 3-Pin DPAK T/R


Verical:
Trans MOSFET N-CH 80V 80A 3-Pin2+Tab DPAK T/R


Win Source:
MOSFET N-CH 80V 80A DPAK


STD110N8F6 PDF数据文档
图片 型号 厂商 下载
STD110N8F6 ST Microelectronics 意法半导体
STD15NF10 ST Microelectronics 意法半导体
STD1805-1 ST Microelectronics 意法半导体
STD15NF10T4 ST Microelectronics 意法半导体
STD1NK60T4 ST Microelectronics 意法半导体
STD1NK80ZT4 ST Microelectronics 意法半导体
STD1802T4-A ST Microelectronics 意法半导体
STD110N02RT4G ON Semiconductor 安森美
STD10NM50N ST Microelectronics 意法半导体
STD150NH02LT4 ST Microelectronics 意法半导体
STD11NM60N ST Microelectronics 意法半导体