STD1802T4-A

低压快速开关NPN功率晶体管 Low voltage fast-switching NPN power transistor

- 双极 BJT - 单 NPN 60 V 3 A 150MHz 15 W 表面贴装型 DPAK

得捷:
TRANS NPN 60V 3A DPAK

艾睿:
The NPN STD1802T4-A general purpose bipolar junction transistor, developed by STMicroelectronics, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 15000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 60V 3A 3-Pin2+Tab TO-252 T/R

Chip1Stop:
Trans GP BJT NPN 60V 3A 3-Pin2+Tab TO-252 T/R

Win Source:
TRANS NPN 60V 3A DPAK / Bipolar BJT Transistor NPN 60 V 3 A 150MHz 15 W Surface Mount DPAK