BSZ035N03MSGATMA1

INFINEON  BSZ035N03MSGATMA1  晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0035 ohm, 10 V, 2 V 新

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 18A/40A 8TSDSON

立创商城:
N沟道 30V 18A 40A

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ035N03MSGATMA1, 40 A, Vds=30 V, 8引脚 TSDSON封装

贸泽:
MOSFET LV POWER MOS

e络盟:
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0035 ohm, 10 V, 2 V

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSZ035N03MSGATMA1 power MOSFET. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 30V 40A TSDSON-8

TME:
Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ035N03MSGATMA1  MOSFET, N-CH, 30V, 40A, PG-TSDSON-8 New

Win Source:
MOSFET N-CH 30V 18A/40A 8TSDSON / N-Channel 30 V 18A Ta, 40A Tc 2.1W Ta, 69W Tc Surface Mount PG-TSDSON-8