IRL640PBF

VISHAY  IRL640PBF.  晶体管, MOSFET, N沟道, 17 A, 200 V, 180 mohm, 5 V, 2 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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Logic-level gate drive

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Ease of paralleling

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RDS ON Specified at VGS = 4 and 5V

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Simple drive requirements