IRL610A

先进的功率MOSFET Advanced Power MOSFET

BVDSS = 200 V

RDSon = 0.046Ω

ID = 3.3 A

FEATURES

♦Avalanche Rugged Technology

♦Rugged Gate Oxide Technology

♦Lower Input Capacitance

♦Improved Gate Charge

♦Extended Safe Operating Area

♦Lower Leakage Current: 10µA Max. @ VDS= 200V

♦Lower RDSON:1.185ΩTyp.

得捷:
MOSFET N-CH 200V 3.3A TO220-3

立创商城:
N沟道 200V 3.3A

贸泽:
MOSFET 200V N-Channel a-FET Logic Level

艾睿:
Trans MOSFET N-CH 200V 3.3A 3-Pin3+Tab TO-220 Rail

Win Source:
MOSFET N-CH 200V 3.3A TO-220