FP35R12W2T4PBPSA1
晶体管, IGBT阵列&模块, Six N Channel, 35 A, 1.85 V, 1.2 kV, Module
Summary of Features:
- .
- Low Switching Losses
- .
- Trench IGBT 3
- .
- V CEsat with positive Temperature Coefficient
- .
- Low V CEsat
- .
- Al 2O 3 Substrate with Low Thermal Resistance
- .
- Compact Design
- .
- Solder Contact Technology
- .
- Rugged mounting due to integrated mounting clamps
Benefits:
- .
- Compact module concept
- .
- Optimized customer’s development cycle time and cost
- .
- Configuration flexibility