FP35R12W2T4PBPSA1
数据手册.pdfInfineon(英飞凌)
电子元器件分类
晶体管, IGBT阵列&模块, Six N Channel, 35 A, 1.85 V, 1.2 kV, Module
Summary of Features:
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- Low Switching Losses
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- Trench IGBT 3
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- V CEsat with positive Temperature Coefficient
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- Low V CEsat
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- Al 2O 3 Substrate with Low Thermal Resistance
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- Compact Design
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- Solder Contact Technology
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- Rugged mounting due to integrated mounting clamps
Benefits:
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- Compact module concept
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- Optimized customer’s development cycle time and cost
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- Configuration flexibility
