FP35R12KT4BOSA1
晶体管, IGBT阵列&模块, N沟道, 35 A, 1.85 V, 210 W, 1.2 kV, Module
Summary of Features:
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- Low stray inductance module design
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- High reliability and power density
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- Copper base plate for optimized heat spread
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- Solderable pins
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- Low switching losses
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- High switching frequency
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- RoHS-compliant modules
Benefits:
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- Compact module concept
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- Optimized customer’s development cycle time and cost
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- Configuration flexibility