IRL520PBF
VISHAY IRL520PBF 晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 5 V, 2 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
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- Dynamic dV/dt rating
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- -55 to 175°C Operating temperature range
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- Repetitive avalanche rated
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- Logic-level gate drive
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- Ease of paralleling
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- RDS ON Specified at VGS = 4 and 5V