IRL510A

先进的功率MOSFET Advanced Power MOSFET

Advanced Power MOSFET

FEATURES

♦Logic-Level Gate Drive

♦Avalanche Rugged Technology

♦Rugged Gate Oxide Technology

♦Lower Input Capacitance

♦Improved Gate Charge

♦Extended Safe Operating Area

♦Lower Leakage Current: 10µA Max. @ VDS= 100V

♦Lower RDSON: 0.336ΩTyp.

艾睿:
Trans MOSFET N-CH 100V 5.6A 3-Pin3+Tab TO-220AB Rail

Verical:
Trans MOSFET N-CH 100V 5.6A 3-Pin 3+Tab TO-220 Rail

Win Source:
MOSFET N-CH 100V 5.6A TO-220