IPD400N06NGBTMA1

DPAK N-CH 60V 27A

表面贴装型 N 通道 60 V 27A（Tc） 68W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 60V 27A TO252-3

贸泽:
MOSFET MV POWER MOS

艾睿:
Increase the current or voltage in your circuit with this IPD400N06NGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 68000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Chip1Stop:
Trans MOSFET N-CH 60V 27A 3-Pin2+Tab TO-252 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 19A; 68W; PG-TO252-3

Verical:
Trans MOSFET N-CH 60V 27A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 60V 27A TO-252