FDMS86101A

FAIRCHILD SEMICONDUCTOR  FDMS86101A  晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0063 ohm, 10 V, 3.1 V

The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.

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Shielded gate MOSFET technology

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Advanced package and silicon combination for low RDS ON and high efficiency

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MSL1 Robust package design

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100% UIL tested

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100% Rg tested