BSH201,215

NXP  BSH201,215  晶体管, MOSFET, P沟道, -160 mA, -60 V, 2.1 ohm, -10 V, -1.9 V

The is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics.

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Logic-level compatible

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Very fast switching

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Low threshold voltage