BSH205G2

NXP  BSH205G2  晶体管, MOSFET, P沟道, -2 A, -20 V, 0.12 ohm, -4.5 V, -700 mV

The is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications.

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Low threshold voltage

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Low ON-state resistance

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Enhanced power dissipation capability of 890mW

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AEC-Q101 qualified

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-55 to 150°C Junction temperature range