动态随机存取存储器 4M, 3.3V EDO 动态随机存取存储器 Async,256Kx16,35ns
DRAM - EDO Memory IC 4Mb 256K x 16 Parallel 18ns 40-TSOP
得捷:
IC DRAM 4MBIT PARALLEL 40TSOP
贸泽:
动态随机存取存储器 4M, 3.3V EDO 动态随机存取存储器 Async,256Kx16,35ns
艾睿:
DRAM Chip EDO 4Mbit 256Kx16 3.3V 40-Pin TSOP-II T/R
Win Source:
IC DRAM 4M 35NS 40TSOP
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | IS41LV16256C-35TLI-TR | Integrated Silicon SolutionISSI | |
 | IS41LV16256B-35KL | Integrated Silicon SolutionISSI | |
| IS41C16256-60K | Integrated Silicon SolutionISSI | |
 | IS41C16257-60K | Integrated Silicon SolutionISSI | |
| IS41LV16256B-35TL | Integrated Silicon SolutionISSI | |
 | IS41LV16256C-35TLI | Integrated Silicon SolutionISSI | |
 | IS41LV16257C-35TLI-TR | Integrated Silicon SolutionISSI | |
 | IS41C16257C-35TLI-TR | Integrated Silicon SolutionISSI | |
 | IS41C16256C-35TLI-TR | Integrated Silicon SolutionISSI | |
 | IS41C16256C-35TLI | Integrated Silicon SolutionISSI | |
 | IS41LV16257C-35TLI | Integrated Silicon SolutionISSI |
