SIHP33N60E-GE3
VISHAY SIHP33N60E-GE3 场效应管, MOSFET, N沟道, 600V, 33A, TO-220AB-3
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
- .
- Low figure-of-meritFOM RON x Qg
- .
- Low input capacitance CISS
- .
- Reduced switching and conduction losses
- .
- Ultra low gate charge
- .
- Avalanche energy rated
- .
- Halogen-free