PXAC201202FCV2R0XTMA1

Trans RF MOSFET N-CH 65V 5Pin Case H-37248 T/R

Summary of Features:

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Asymmetric Doherty design: 

\- Main = 35 W Typ P1dB 

\- Peak = 80 W Typ P1dB

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Broadband internal matching

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CW performance in a Doherty configuration, 1805 MHz, 28 V

\- Output power = 100 W P1dB

\- Gain = 17.3 dB at 17.8 W Avg.

\- Efficiency = 46% at 17.8 W Avg.

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CW performance in a Doherty configuration, 2100 MHz, 28 V

\- Output power = 15.8 W Avg.

\- Gain = 15.5 dB

\- Efficiency = 46%

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Capable of handling 10:1 VSWR @ 28 V, 16 W CW output power

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Integrated ESD protection, HBM Class 1C per JESD22-A114

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Low thermal resistance

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Pb-free and RoHS-compliant