IPB100N04S303ATMA1

N沟道 40V 100A

表面贴装型 N 通道 40 V 100A（Tc） 214W（Tc） PG-TO263-3-2

立创商城:
N沟道 40V 100A

得捷:
MOSFET N-CH 40V 100A TO263-3

贸泽:
MOSFET N-CHANNEL_30/40V

艾睿:
Increase the current or voltage in your circuit with this IPB100N04S303ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 214000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 40V 100A 3-Pin2+Tab TO-263

TME:
Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W

Verical:
Trans MOSFET N-CH 40V 100A Automotive 3-Pin2+Tab D2PAK T/R

Win Source:
MOSFET N-CH 40V 100A TO263-3