IPB100N04S303ATMA1
数据手册.pdfN沟道 40V 100A
表面贴装型 N 通道 40 V 100A(Tc) 214W(Tc) PG-TO263-3-2
立创商城:
N沟道 40V 100A
得捷:
MOSFET N-CH 40V 100A TO263-3
贸泽:
MOSFET N-CHANNEL_30/40V
艾睿:
Increase the current or voltage in your circuit with this IPB100N04S303ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 214000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 40V 100A 3-Pin2+Tab TO-263
TME:
Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Verical:
Trans MOSFET N-CH 40V 100A Automotive 3-Pin2+Tab D2PAK T/R
Win Source:
MOSFET N-CH 40V 100A TO263-3