IKB15N60T

IGBT的沟槽场终止和技术，柔软，快速恢复反并联EMCON何二极管 IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Summary of Features:

.

Lowest V cesat drop for lower conduction losses

.

Low switching losses

.

Easy parallel switching capability due to positive temperature coefficient in V cesat

.

Very soft, fast recovery anti-parallel Emitter Controlled Diode

.

High ruggedness, temperature stable behavior

.

Low EMI emissions

.

Low gate charge

.

Very tight parameter distribution

Benefits:

.

Highest efficiency – low conduction and switching losses

.

Comprehensive portfolio in 600V and 1200V for flexibility of design

.

High device reliability