FDB8030L
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDB8030L 晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0031 ohm, 10 V, 1.5 V
The is a logic level N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster-switching and lower gate charge than other MOSFETS with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
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- Critical DC electrical parameters specified at elevated temperature
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- High performance Trench technology for extremely low RDS ON