BSS63LT1G
数据手册.pdfON SEMICONDUCTOR BSS63LT1G 单晶体管 双极, PNP, -100 V, 95 MHz, 225 mW, -100 mA, 30 hFE
小信号 PNP ,
### 标准
带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。
欧时:
### 小信号 PNP 晶体管,ON Semiconductor### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。### 双极性晶体管,On SemiconductorON Semiconductor 的各种双极晶体管,包括以下类别:小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
得捷:
TRANS PNP 100V 0.1A SOT23-3
立创商城:
BSS63LT1G
e络盟:
ON SEMICONDUCTOR BSS63LT1G. 双极性晶体管, PNP, -100V, SOT-23
艾睿:
Implement this versatile PNP BSS63LT1G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
ON Semi BSS63LT1G PNP Bipolar Transistor, 0.1 A, 100 V, 3-Pin SOT-23
安富利:
Trans GP BJT PNP 100V 0.1A 3-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT PNP 100V 0.1A Automotive 3-Pin SOT-23 T/R
TME:
Transistor: PNP; bipolar; 100V; 0.1A; 300mW; SOT23
Verical:
Trans GP BJT PNP 100V 0.1A 300mW 3-Pin SOT-23 T/R
Newark:
# ON SEMICONDUCTOR BSS63LT1G Bipolar BJT Single Transistor, PNP, -100 V, 95 MHz, 225 mW, -100 mA, 30 hFE
Win Source:
TRANS PNP 100V 0.1A SOT-23
DeviceMart:
TRANS PNP 100V 100MA SOT-23