SI9435BDY-T1-E3

VISHAY  SI9435BDY-T1-E3  场效应管, MOSFET, P沟道, 8-SOIC

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

e络盟:
VISHAY  SI9435BDY-T1-E3  场效应管, MOSFET, P沟道, -5.7A, -30V, 2.5W

艾睿:
Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R

Allied Electronics:
P-CHANNEL 30-V D-S MOSFET

安富利:
Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R

富昌:
单 P 沟道 30 V 0.042 Ohms 表面贴装 功率 Mosfet - SOIC-8

Verical:
Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI9435BDY-T1-E3  MOSFET Transistor, P Channel, -5.7 A, -30 V, 70 mohm, -4.5 V, -1 V

力源芯城:
-30V,-4.1A,P沟道MOSFET