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MMDF2P02HDR2G

MMDF2P02HDR2G

数据手册.pdf

2A,-20V,P沟道功率双MOSFET

Power MOSFET 2 Amps, 20 Volts

P−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low RDSon and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSdevices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Features

•Ultra Low RDSonProvides Higher Efficiency and Extends Battery Life

•Logic Level Gate Drive − Can Be Driven by Logic ICs

•Miniature SO−8 Surface Mount Package − Saves Board Space

•Diode Is Characterized for Use In Bridge Circuits

•Diode Exhibits High Speed, With Soft Recovery

•IDSSSpecified at Elevated Temperature

•Avalanche Energy Specified

•Mounting Information for SO−8 Package Provided

•Pb−Free Package is Available

MMDF2P02HDR2G中文资料参数规格
技术参数

额定电压DC -20.0 V

额定电流 -2.00 A

漏源极电阻 160 mΩ

极性 Dual P-Channel

耗散功率 2 W

漏源极电压Vds 20 V

漏源击穿电压 20.0 V

栅源击穿电压 ±20.0 V

连续漏极电流Ids 3.30 A

输入电容Ciss 588pF @16VVds

额定功率Max 2 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2 W

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

长度 5 mm

宽度 4 mm

高度 1.5 mm

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

MMDF2P02HDR2G引脚图与封装图
暂无图片
在线购买MMDF2P02HDR2G
型号 制造商 描述 购买
MMDF2P02HDR2G ON Semiconductor 安森美 2A,-20V,P沟道功率双MOSFET 搜索库存
替代型号MMDF2P02HDR2G
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MMDF2P02HDR2G

品牌: ON Semiconductor 安森美

封装: SOIC Dual P-Channel 20V 3.3A 160mohms

当前型号

2A,-20V,P沟道功率双MOSFET

当前型号

型号: MMDF2P02HDR2

品牌: 安森美

封装: SOIC P-Channel 20V 3.3A 160mohms

类似代替

功率MOSFET 2安培, 20伏P沟道SO- 8 ,双 Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual

MMDF2P02HDR2G和MMDF2P02HDR2的区别

型号: SI4943BDY-T1-E3

品牌: 威世

封装: 8-SOIC Dual P-Channel 20V 8.4A 19mΩ

功能相似

双P通道20 - V(D -S)的MOSFET Dual P-Channel 20-V D-S MOSFET

MMDF2P02HDR2G和SI4943BDY-T1-E3的区别

型号: MMDF2P02HD

品牌: 安森美

封装:

功能相似

功率MOSFET 2安培, 20伏P沟道SO- 8 ,双 Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual

MMDF2P02HDR2G和MMDF2P02HD的区别