MUN5314DW1T1、UMD9NTR、MUN5314DW1T1G对比区别

高亮显示差异参数

型号 MUN5314DW1T1 UMD9NTR MUN5314DW1T1G

描述 双偏置电阻晶体管 Dual Bias Resistor TransistorsNPN+PNP 晶体管，ROHM### Digital Transistors, ROHMResistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.ON SEMICONDUCTOR  MUN5314DW1T1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-363

数据手册 ---

制造商 ON Semiconductor (安森美) ROHM Semiconductor (罗姆半导体) ON Semiconductor (安森美)

分类 双极性晶体管双极性晶体管双极性晶体管

安装方式 Surface Mount Surface Mount Surface Mount

封装 SC-88-6 SC-70-6 SC-70-6

引脚数 - 6 6

额定电压(DC) 50.0 V - 50.0 V

额定电流 100 mA 70.0 mA 100 mA

通道数 2 2 -

极性 NPN+PNP NPN, PNP NPN, PNP

耗散功率 187 mW 0.15 W 187 mW

击穿电压(集电极-发射极) 50 V 50 V 50 V

集电极最大允许电流 100mA 100mA 100mA

最小电流放大倍数(hFE) 80 68 @5mA, 5V 80 @5mA, 10V

最大电流放大倍数(hFE) 80 @5mA, 10V - -

工作温度(Max) 150 ℃ 150 ℃ 150 ℃

工作温度(Min) 55 ℃ -55 ℃ -55 ℃

额定功率(Max) - 150 mW 250 mW

耗散功率(Max) - 300 mW 385 mW

额定功率 - 0.15 W -

增益带宽 - 250 MHz -

长度 2 mm 2.1 mm 2 mm

宽度 1.25 mm 1.35 mm 1.25 mm

高度 0.9 mm 0.9 mm 0.9 mm

封装 SC-88-6 SC-70-6 SC-70-6

产品生命周期 Unknown Active Active

包装方式 Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Contains Lead Lead Free Lead Free

REACH SVHC标准 - No SVHC No SVHC

REACH SVHC版本 - - 2015/12/17

ECCN代码 EAR99 EAR99 EAR99

工作温度 - -55℃ ~ 150℃ -55℃ ~ 150℃