2N6042G

ON SEMICONDUCTOR  2N6042G.  达林顿双极晶体管

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 PNP; and 2N6043, 2N6045 NPN are complementary devices.

Features

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High DC Current Gain -

hFE = 2500 Typ @ IC = 4.0 Adc

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Collector-Emitter Sustaining Voltage - @ 100 mAdc -

VCEOsus = 60 Vdc Min - 2N6040, 2N6043

VCEOsus= 80 Vdc Min - 2N6041, 2N6044

VCEOsus= 100 Vdc Min - 2N6042, 2N6045

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Low Collector-Emitter Saturation Voltage -

VCEsat = 2.0 Vdc Max @ IC = 4.0 Adc - 2N6040,41, 2N6043,44

VCEsat= 2.0 Vdc Max @ IC = 3.0 Adc - 2N6042, 2N6045

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Monolithic Construction with Built-In Base-Emitter Shunt Resistors

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Pb-Free Packages are Available