ZXTN2005ZTA

Trans GP BJT NPN 25V 5.5A 2100mW Automotive 4Pin3+Tab SOT-89 T/R

- 双极 BJT - 单 NPN 25 V 5.5 A 150MHz 2.1 W 表面贴装型 SOT-89-3

得捷:
TRANS NPN 25V 5.5A SOT89-3

立创商城:
NPN 25V 5.5A

艾睿:
Implement this versatile NPN ZXTN2005ZTA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 7 V.

安富利:
Trans GP BJT NPN 25V 5.5A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT NPN 25V 5.5A 2100mW Automotive 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT NPN 25V 5.5A Automotive 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS NPN 25V 5.5A SOT89