SI7430DP-T1-GE3

VISHAY  SI7430DP-T1-GE3  晶体管, MOSFET, N沟道, 26 A, 150 V, 0.036 ohm, 10 V, 4.5 V

The is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch and single-ended power switch applications.

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Extremely low Qgd for reduced dV/dt, Qgd and shoot-through

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100% Rg tested

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range