SI7456DP-TI-GE3

VISHAY  SI7456DP-TI-GE3  晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V

The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.

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New low thermal resistance PowerPAK® package with small size and low 1.07mm profile

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PWM optimized

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Fast switching

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100% Rg tested

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Halogen-free

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-55 to 150°C Operating temperature range