AP2310GN

MOS场效应管/AP2310GN

最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 12V 最大漏极电流Id Drain Current| 5.3A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.030Ω/Ohm @5.5A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.5V 耗散功率Pd Power Dissipation| 1.38W Description & Applications| Advanced Power N-CHANNEL ENHANCEMENT MODE POWER MOSFET The Advanced Power MOSFETs from APEC provide the designer with the best combination ofastswitching, low on-resistance and cost-effectiveness. 描述与应用| 高级电源 N沟道增强模式 功率MOSFET 先进的功率MOSFET提供从APEC 设计师与快速切换的最佳组合， 低导通电阻和成本效益