AP2306AGN-HF-3TR
ADVANCED POWER ELECTRONICS CORP AP2306AGN-HF-3TR 晶体管, MOSFET, N沟道, 5 A, 30 V, 0.035 ohm, 4.5 V, 300 mV
The from Corp is a surface mount, N channel enhancement mode power MOSFET in SOT-23 package. This MOSFET provide designers with best combiation of fast switching, low resistance and cost effectiveness. The device is best suited for medium current applications such as load switches.
- .
- Supports 2.5V gate drive
- .
- Drain to source voltage of 30V
- .
- Gate to source voltage of ±8V
- .
- Continuous drain current Id of 5A at 25°C
- .
- Power dissipation pd of 1.38W
- .
- Operating junction temperature range from -55°C to 150°C
- .
- Low on state resistance of 35mohm at Vgs 4.5V