IXDN75N120

Trans IGBT Chip N-CH 1200V 150A 660000mW 4Pin SOT-227B

Don"t be afraid to step up the amps in your device when using this IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 660000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

得捷:
IGBT MOD 1200V 150A 660W SOT227B

艾睿:
Don&s;t be afraid to step up the amps in your device when using this IXDN75N120 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 660000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 150A 4-Pin SOT-227B

Verical:
Trans IGBT Chip N-CH 1200V 150A 660000mW 4-Pin SOT-227B