IXYH82N120C3

IXYS SEMICONDUCTOR  IXYH82N120C3  单晶体管, IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 引脚

IGBT 分立元件，IXYS XPT 系列

IXYS 的 XPT™ 系列分立件 IGBT 采用超轻穿通薄芯片技术，可降低热电阻和能源损耗。 这些设备提供快速切换时间，具有低尾线电流，并提供各种工业标准和专有封装。

高功率密度和低 VCEsat

方形反向偏置安全工作区域 RBSOA 高达额定击穿电压

短路容量，确保 10usec

正向通态电压温度系数

可选 Co-Pack Sonic-FRD™ 或 HiPerFRED™ 二极管

国际标准和专有高电压封装

欧时:
IXYS IXYH82N120C3 N沟道 IGBT, 200 A, Vce=1200 V, 50kHz, 3引脚 TO-247封装

得捷:
IGBT 1200V 200A 1250W TO247AD

e络盟:
单晶体管, IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 引脚

艾睿:
You won&s;t need to worry about any lagging in your circuit with this IXYH82N120C3 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 1250000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

Verical:
Trans IGBT Chip N-CH 1200V 200A 1250000mW 3-Pin3+Tab TO-247AD

Newark:
# IXYS SEMICONDUCTOR  IXYH82N120C3  IGBT, SINGLE, 1.2KV, 82A, TO-247AD

DeviceMart:
IGBT 1200V 160A 1040W TO247AD