IXYH100N65C3

Trans IGBT Chip N-CH 650V 200A 830000mW 3Pin3+Tab TO-247AD

You won"t need to worry about any lagging in your circuit with this IGBT transistor from Ixys Corporation. Its maximum power dissipation is 830000 mW. It has a maximum collector emitter voltage of 650 V. This device is made with xpt technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

得捷:
IGBT 650V 200A 830W TO247

艾睿:
Trans IGBT Chip N-CH 650V 200A 3-Pin3+Tab TO-247AD

IXYH100N65C3详细参数

IXYH100N65C3 PDF数据文档

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