FQP30N06L

FAIRCHILD SEMICONDUCTOR  FQP30N06L  晶体管, MOSFET, N沟道, 32 A, 60 V, 27 mohm, 10 V, 2.5 V

The is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.

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Low gate charge

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100% Avalanche tested

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Low crss typical 50pF

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±20V Gate-source voltage