FQS4903TF

FAIRCHILD SEMICONDUCTOR  FQS4903TF  双路场效应管, MOSFET, 双N沟道, 370 mA, 500 V, 6.2 ohm, 10 V, 4 V

The is a N-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

.

Low gate charge

.

Low Crss 4.5pF

.

100% Avalanche tested

.

±25V Gate to source voltage

.

0.37A Continuous drain current

.

0.234A Pulsed drain current