FQS4901TF
FAIRCHILD SEMICONDUCTOR FQS4901TF 双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
The is a QFET® dual N-channel MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge
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- Low Crss 5pF
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- 100% Avalanche tested
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- ±25V Gate to source voltage
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- 0.45A Continuous drain current
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- 0.285A Pulsed drain current
