SIB433EDK-T1-GE3

VISHAY  SIB433EDK-T1-GE3  晶体管, MOSFET, P沟道, -9 A, -20 V, 0.085 ohm, -1.8 V, -400 mV

The is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and charger switch applications.

.

New thermally enhanced PowerPAK® package

.

Small footprint area

.

Low ON-resistance

.

100% Rg tested

.

Halogen-free

.

-55 to 150°C Operating temperature range