SIB452DK-T1-GE3

VISHAY  SIB452DK-T1-GE3  晶体管, MOSFET, N沟道, 1.5 A, 190 V, 1.8 ohm, 4.5 V, 1.5 V

The is a 190VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for boost converter applications.

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New thermally enhanced PowerPAK® package

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Small footprint area

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Low ON-resistance

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Halogen-free

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-55 to 150°C Operating temperature range