IPB120N06S403ATMA1

D2PAK N-CH 60V 120A

表面贴装型 N 通道 120A（Tc） 167W（Tc） PG-TO263-3-2

得捷:
MOSFET N-CH 60V 120A TO263-3

艾睿:
This IPB120N06S403ATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 167000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

Verical:
Trans MOSFET N-CH 60V 120A Automotive 3-Pin2+Tab D2PAK T/R