PMF370XN,115

NXP  PMF370XN,115  晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V

The is a N-channel enhancement-mode extremely low level FET in a plastic package using TrenchMOS® technology. It is designed and qualified for use in driver circuits and switching in portable appliances applications.

.

Low conduction losses due to low ON-state resistance

.

Low threshold voltage

.

Saves PCB space due to small footprint 40% smaller than SOT23

.

Suitable for low gate drive sources

.

Surface-mount package

.

-55 to 150°C Junction temperature range