IRFD9110PBF

VISHAY  IRFD9110PBF.  晶体管, MOSFET, P沟道, 700 mA, -100 V, 1.2 ohm, -10 V, -4 V

The is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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175°C Operating temperature

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Easy to parallel

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Simple drive requirement

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For automatic insertion

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End stackable